IMPROVED MOS CAPACITOR MEASUREMENTS USING THE Q-C METHOD

被引：34

作者：

BREWS, JR

NICOLLIAN, EH

机构：

来源：

SOLID-STATE ELECTRONICS | 1984年 / 27卷 / 11期

关键词：

D O I：

10.1016/0038-1101(84)90070-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：963 / 975

页数：13

共 20 条

[1] DIFFUSION OF SUBSTITUTIONAL IMPURITIES IN SILICON AT SHORT OXIDATION TIMES - AN INSIGHT INTO POINT-DEFECT KINETICS [J].

ANTONIADIS, DA ;

MOSKOWITZ, I .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :6788-6796

[2] INTERPRETATION OF C-V MEASUREMENTS FOR DETERMINING THE DOPING PROFILE IN SEMICONDUCTORS [J].

BACCARANI, G ;

RUDAN, M ;

SPADINI, G ;

MAES, H ;

VANDERVORST, W ;

VANOVERSTRAETEN, R .

SOLID-STATE ELECTRONICS, 1980, 23 (01) :65-71

[3] CAPACITANCE TRANSIENT SPECTROSCOPY OF TRACE CONTAMINATION IN SILICON [J].

BENTON, JL ;

KIMERLING, LC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (09) :2098-2102

[4] SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES [J].

BERGLUND, CN .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (10) :701-+

[5] DIGITAL IMPLEMENTATION OF THE Q-C METHOD FOR MOS MEASUREMENTS [J].

BOULIN, DM ;

BREWS, JR ;

NICOLLIAN, EH .

SOLID-STATE ELECTRONICS, 1984, 27 (11) :977-988

[6] DOPANT DENSITY FROM MAXIMUM-MINIMUM CAPACITANCE RATIO OF IMPLANTED MOS STRUCTURES [J].

BREWS, JR .

SOLID-STATE ELECTRONICS, 1982, 25 (05) :375-379

[7] CORRECTING INTERFACE-STATE ERRORS IN MOS DOPING PROFILE DETERMINATIONS [J].

BREWS, JR .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (07) :3228-3231

[8] DESCRIPTION OF SIO2-SI INTERFACE PROPERTIES BY MEANS OF VERY LOW FREQUENCY MOS CAPACITANCE MEASUREMENTS [J].

CASTAGNE, R ;

VAPAILLE, A .

SURFACE SCIENCE, 1971, 28 (01) :157-+

[9] REDISTRIBUTION OF ACCEPTOR + DONOR IMPURITIES DURING THERMAL OXIDATION OF SILICON [J].

GROVE, AS ;

SAH, CT ;

LEISTIKO, O .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (09) :2695-&

[10]

GROVE AS, 1967, PHYS TECHNOL S, P171

← 1 2 →