THE COMPOSITION AND PROPERTIES OF PECVD SILICON-OXIDE FILMS

被引：33

作者：

PAN, P

NESBIT, LA

DOUSE, RW

GLEASON, RT

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 08期

关键词：

D O I：

10.1149/1.2114272

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2012 / 2019

页数：8

共 31 条

[1] AES AND PES STUDIES OF SEMI-INSULATING POLYCRYSTALLINE SILICON (SIPOS) FILMS [J].

ADACHI, T ;

HELMS, CR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (07) :1617-1621

[2] CHARACTERIZATION OF PLASMA-DEPOSITED SILICON DIOXIDE [J].

ADAMS, AC ;

ALEXANDER, FB ;

CAPIO, CD ;

SMITH, TE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (07) :1545-1551

[3]

BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556

[4]

COLBY JW, 1971, 6TH P NAT C EL PROB

[5] ELECTRICALLY-ALTERABLE READ-ONLY-MEMORY USING SI-RICH SIO2 INJECTORS AND A FLOATING POLYCRYSTALLINE SILICON STORAGE LAYER [J].

DIMARIA, DJ ;

DEMEYER, KM ;

SERRANO, CM ;

DONG, DW .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) :4825-4842

[6] HIGH-CURRENT INJECTION INTO SIO2 FROM SI RICH SIO2-FILMS AND EXPERIMENTAL APPLICATIONS [J].

DIMARIA, DJ ;

DONG, DW .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2722-2735

[7] PREPARATION AND SOME PROPERTIES OF CHEMICALLY VAPOR-DEPOSITED SI-RICH SIO2 AND SI3N4 FILMS [J].

DONG, D ;

IRENE, EA ;

YOUNG, DR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (05) :819-823

[8] MECHANISMS OF PLASMA-ENHANCED SILICON-NITRIDE DEPOSITION USING SIH4-N2 MIXTURE [J].

DUN, H ;

PAN, P ;

WHITE, FR ;

DOUSE, RW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (07) :1555-1563

[9] CRYSTALLOGRAPHIC STUDY OF SEMI-INSULATING POLYCRYSTALLINE SILICON (SIPOS) DOPED WITH OXYGEN-ATOMS [J].

HAMASAKI, M ;

ADACHI, T ;

WAKAYAMA, S ;

KIKUCHI, M .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :3987-3992

[10] ATTENUATED TOTAL REFLECTANCE STUDY OF SILICON-RICH SILICON DIOXIDE FILMS [J].

HARTSTEIN, A ;

DIMARIA, DJ ;

DONG, DW ;

KUCZA, JA .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (07) :3860-3862

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