MECHANISM OF LEAKAGE CURRENT THROUGH THE NANOSCALE SIO2 LAYER

被引：48

作者：

NAGANO, S ^{[1
]}

TSUKIJI, M ^{[1
]}

ANDO, K ^{[1
]}

HASEGAWA, E ^{[1
]}

ISHITANI, A ^{[1
]}

机构：

[1] NEC CORP LTD,ULSI DEVICE DEV LABS,SAGAMIHARA,KANAGAWA 229,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 07期

关键词：

D O I：

10.1063/1.356116

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We clarify the mechanism of leakage current through the nanoscale ultrathin silicon dioxide (SiO2) layer in a metal-insulator-semiconductor structure based on the multiple scattering theory when technologically important phosphorus doped polycrystalline silicon is adopted as the gate electrode. We also derive an analytic expression for the direct tunneling current, and show that its measurement presents an excellent opportunity to determine the effective mass of an electron in the SiO2.

引用

页码：3530 / 3535

页数：6

共 17 条

[11] GENERALIZED FORMULA FOR ELECTRIC TUNNEL EFFECT BETWEEN SIMILAR ELECTRODES SEPARATED BY A THIN INSULATING FILM [J].

SIMMONS, JG .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) :1793-&

[12] REVIEW OF CONDUCTOR-INSULATOR-SEMICONDUCTOR (CIS) SOLAR-CELLS [J].

SINGH, R ;

GREEN, MA ;

RAJKANAN, K .

SOLAR CELLS, 1981, 3 (02) :95-148

[13]

Sze S. M., 1981, PHYSICS SEMICONDUCTO

[14] CURRENT TRANSPORT AND MAXIMUM DIELECTRIC STRENGTH OF SILICON NITRIDE FILMS [J].

SZE, SM .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (07) :2951-+

[15] EQUILIBRIUM TO NONEQUILIBRIUM TRANSITION IN MOS (SURFACE OXIDE) TUNNEL-DIODE [J].

TEMPLE, VAK ;

GREEN, MA ;

SHEWCHUN, J .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (11) :4934-4943

[16]

WEINBERG ZA, 1981, J APPL PHYS, V52, P5710

[17] WORK FUNCTION DIFFERENCE OF MOS-SYSTEM WITH ALUMINUM FIELD PLATES AND POLYCRYSTALLINE SILICON FIELD PLATES [J].

WERNER, WM .

SOLID-STATE ELECTRONICS, 1974, 17 (08) :769-775

← 1 2 →