BISTABILITY AND NEGATIVE-RESISTANCE IN SEMICONDUCTOR-LASERS

被引：38

作者：

HARDER, C

LAU, KY

YARIV, A

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 02期

关键词：

D O I：

10.1063/1.93010

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：124 / 126

页数：3

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[1] SINGLE-PASS GAIN MEASUREMENTS ON OPTICALLY PUMPED ALXGA(1-X)AS-ALYGA(1-Y)AS DOUBLE-HETEROJUNCTION LASER STRUCTURES AT ROOM-TEMPERATURE
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[6] REPETITIVE PULSATING STRIPE GEOMETRY GAALAS DOUBLE-HETEROSTRUCTURE LASERS WITH A STRIPE BY A SHALLOW ZN DIFFUSION
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[J]. APPLIED PHYSICS LETTERS, 1981, 39 (01) : 14 - 16
[7] BISTABILITY AND PULSATIONS IN CW SEMICONDUCTOR-LASERS WITH A CONTROLLED AMOUNT OF SATURABLE ABSORPTION
HARDER, C
LAU, KY
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[J]. APPLIED PHYSICS LETTERS, 1981, 39 (05) : 382 - 384
[8] MEASUREMENT OF GAIN AND ABSORPTION-SPECTRA IN ALGAAS BURIED HETEROSTRUCTURE LASERS
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[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) : 3042 - 3050
[9] BISTABLE OPERATION IN SEMICONDUCTOR-LASERS WITH INHOMOGENEOUS EXCITATION
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[J]. ELECTRONICS LETTERS, 1981, 17 (04) : 167 - 168
[10] LAU KH, UNPUB