TEMPERATURE-DEPENDENCE OF AL-UNDOPED AL0.5GA0.5AS/GAAS CAPACITORS

被引：2

作者：

DRUMMOND, TJ

FISCHER, RJ

KOPP, WF

ARNOLD, DJ

KLEM, JF

MORKOC, H

SHUR, MS

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[2] UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 09期

关键词：

D O I：

10.1109/T-ED.1984.21682

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1164 / 1168

页数：5

共 19 条

[1] INVESTIGATION OF HETEROJUNCTIONS FOR MIS DEVICES WITH OXYGEN-DOPED ALXGA1-XAS ON N-TYPE GAAS [J].

CASEY, HC ;

CHO, AY ;

LANG, DV ;

NICOLLIAN, EH ;

FOY, PW .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3484-3491

[2] TUNNELLING THROUGH GAAS-ALXGA1-XAS-GAAS DOUBLE HETEROJUNCTIONS [J].

DELAGEBEAUDEUF, D ;

DELESCLUSE, P ;

ETIENNE, P ;

MASSIES, J ;

LAVIRON, M ;

CHAPLART, J ;

LINH, T .

ELECTRONICS LETTERS, 1982, 18 (02) :85-87

[3]

DRUMMOND TJ, UNPUB APPL PHYS LETT

[4]

DRUMMOND TJ, 1982, ELECTRON LETT, V18, P794

[5] MINORITY-CARRIER MIS TUNNEL-DIODES AND THEIR APPLICATION TO ELECTRON-VOLTAIC AND PHOTO-VOLTAIC ENERGY-CONVERSION .1. THEORY [J].

GREEN, MA ;

KING, FD ;

SHEWCHUN, J .

SOLID-STATE ELECTRONICS, 1974, 17 (06) :551-561

[6] ZUR BERECHNUNG DES TUNNELSTROMS DURCH EINE TRAPEZFORMIGE POTENTIALSTUFE [J].

GUNDLACH, KH .

SOLID-STATE ELECTRONICS, 1966, 9 (10) :949-&

[7]

HELMAN JS, 1976, APPL PHYS LETT, V28, P816

[8]

HICKMOTT TW, UNPUB APPL PHYS LETT

[9] DESIGN AND FABRICATION OF HIGH TRANSCONDUCTANCE MODULATION-DOPED (AL,GA)AS/GAAS FETS [J].

LEE, K ;

SHUR, MS ;

DRUMMOND, TJ ;

SU, SL ;

LYONS, WG ;

FISCHER, R ;

MORKOC, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02) :186-189

[10] TUNNELING IN THIN MOS STRUCTURES [J].

MASERJIAN, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (06) :996-1003

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