TEMPERATURE-DEPENDENCE OF AL-UNDOPED AL0.5GA0.5AS/GAAS CAPACITORS

被引：2

作者：

DRUMMOND, TJ

FISCHER, RJ

KOPP, WF

ARNOLD, DJ

KLEM, JF

MORKOC, H

SHUR, MS

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[2] UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 09期

关键词：

D O I：

10.1109/T-ED.1984.21682

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1164 / 1168

页数：5

共 19 条

[11] ENHANCEMENT-MODE HIGH ELECTRON-MOBILITY TRANSISTORS FOR LOGIC APPLICATIONS [J].

MIMURA, T ;

HIYAMIZU, S ;

JOSHIN, K ;

HIKOSAKA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (05) :L317-L319

[12]

OKAMOTO H, 1983, JAPAN J APPL PHYS, V1, pL367

[13] SCHOTTKY-BARRIER HEIGHTS OF MOLECULAR-BEAM EPITAXIAL METAL-ALGAAS STRUCTURES [J].

OKAMOTO, K ;

WOOD, CEC ;

EASTMAN, LF .

APPLIED PHYSICS LETTERS, 1981, 38 (08) :636-638

[14]

SMITH RA, 1978, SEMICONDUCTORS, P83

[15] ELECTRICAL MEASUREMENTS ON N+-GAAS-UNDOPED GA0.6AL0.4AS-N-GAAS CAPACITORS [J].

SOLOMON, PM ;

HICKMOTT, TW ;

MORKOC, H ;

FISCHER, R .

APPLIED PHYSICS LETTERS, 1983, 42 (09) :821-823

[16] PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT [J].

STERN, F ;

HOWARD, WE .

PHYSICAL REVIEW, 1967, 163 (03) :816-&

[17] EXACT LOW-FREQUENCY CAPACITANCE-VOLTAGE CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR (MOS) AND SEMICONDUCTOR-INSULATOR-SEMICONDUCTOR (SIS) STRUCTURES [J].

TEMPLE, VAK ;

SHEWCHUN, J .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (04) :235-&

[18] ON TUNNELING IN METAL-OXIDE-SILICON STRUCTURES [J].

WEINBERG, ZA .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) :5052-5056

[19] CURRENT SUPPRESSION INDUCED BY CONDUCTION-BAND DISCONTINUITY IN AL0.35GA0.65AS-GAAS N-PARA-HETEROJUNCTION DIODES [J].

WU, CM ;

YANG, ES .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) :2261-2263

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