PROPERTIES OF AMORPHOUS HYDROGENATED SILICON-TIN ALLOYS PREPARED BY RADIO-FREQUENCY SPUTTERING

被引：38

作者：

WILLIAMSON, DL ^{[1
]}

KERNS, RC ^{[1
]}

DEB, SK ^{[1
]}

机构：

[1] SOLAR ENERGY RES INST,GOLDEN,CO 80401

来源：

关键词：

D O I：

10.1063/1.333320

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2816 / 2824

页数：9

共 55 条

[1] Adler D., 1971, Critical Reviews in Solid State Sciences, V2, DOI 10.1080/10408437108243545
[2] IMPORTANCE OF ARGON PRESSURE IN THE PREPARATION OF RF-SPUTTERED AMORPHOUS SILICON-HYDROGEN ALLOYS
ANDERSON, DA
MODDEL, G
PAESLER, MA
PAUL, W
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (03): : 906 - 912
[3] Andreev A. A., 1981, Soviet Physics - Solid State, V23, P1252
[4] ANDREEV AA, 1982, SOV PHYS SEMICOND+, V16, P715
[5] [Anonymous], 1978, INFRARED RAMAN SPECT
[6] INTERPRETATION OF THE ISOMER-SHIFT OF INTERSTITIALLY IMPLANTED SN-119 IMPURITIES IN GROUP-IV SEMICONDUCTORS
ANTONCIK, E
[J]. HYPERFINE INTERACTIONS, 1980, 8 (02): : 161 - 171
[7] HYDROGEN EVOLUTION AND DEFECT CREATION IN AMORPHOUS SI-H ALLOYS
BIEGELSEN, DK
STREET, RA
TSAI, CC
KNIGHTS, JC
[J]. PHYSICAL REVIEW B, 1979, 20 (12): : 4839 - 4846
[8] BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556
[9] PHOTOCONDUCTIVITY IN ALPHA-SI-H AND ALPHA-SIXC1-X-H, CORRELATION WITH PHOTO-LUMINESCENCE RESULTS
CAFFIER, D
LECONTELLEC, M
RICHARD, J
[J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 1037 - 1040
[10] OPTICAL-PROPERTIES OF AMORPHOUS SIXGE1-X(H) ALLOYS PREPARED BY RFGLOW DISCHARGE
CHEVALLIER, J
WIEDER, H
ONTON, A
GUARNIERI, CR
[J]. SOLID STATE COMMUNICATIONS, 1977, 24 (12) : 867 - 869