INTERPRETATION OF THE ISOMER-SHIFT OF INTERSTITIALLY IMPLANTED SN-119 IMPURITIES IN GROUP-IV SEMICONDUCTORS

被引：9

作者：

ANTONCIK, E

机构：

来源：

HYPERFINE INTERACTIONS | 1980年 / 8卷 / 02期

关键词：

D O I：

10.1007/BF01026867

中图分类号：

O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];

学科分类号：

070203 ; 070304 ; 081704 ; 1406 ;

摘要：

引用

页码：161 / 171

页数：11

共 31 条

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[3] CALIBRATION OF ISOMER-SHIFT FOR SN-119
ANTONCIK, E
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1977, 79 (02): : 605 - 611
[4] ANTONCIK E, UNPUBLISHED
[5] ANTONCIK E, 1975, 1974 P INT C LATT DE, P565
[6] NUMERICAL RELATIVISTIC SELF-CONSISTENT FIELD CALCULATION OF ELECTRON-DENSITY AND [R-3] FOR A NUMBER OF ELECTRON CONFIGURATIONS OF IRON AND TIN - APPLICATION TO TIN MOSSBAUER-SPECTROSCOPY
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[J]. JOURNAL OF CHEMICAL PHYSICS, 1975, 63 (12) : 5256 - 5262
[7] ISOMER-SHIFTS OF I-129 IMPURITIES IMPLANTED IN SEMICONDUCTORS
DEWAARD, H
BUKSHPAN, S
KEMERINK, GJ
[J]. HYPERFINE INTERACTIONS, 1977, 5 (01): : 45 - 59
[8] Dunlap B. D., 1978, Mossbauer isomer shifts, P15
[9] Flinn P. A., 1978, Mossbauer isomer shifts, P593
[10] RENORMALIZED ATOMS - COHESION IN TRANSITION-METALS
GELATT, CD
EHRENREICH, H
WATSON, RE
[J]. PHYSICAL REVIEW B, 1977, 15 (04): : 1613 - 1628