BREAKDOWN VOLTAGES AND CURRENTS IN MECHANICALLY STRESSED GE AND SI DIODES - (AN ISOTROPIC STRESS EFFECT E)

被引：12

作者：

RINDNER, W

机构：

来源：

APPLIED PHYSICS LETTERS | 1965年 / 6卷 / 11期

关键词：

D O I：

10.1063/1.1754145

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：225 / &

相关论文

共 9 条

[1] ANISOTROPIC STRESS EFFECT ON EXCESS CURRENT IN TUNNEL DIODES
BERNARD, W
RINDNER, W
ROTH, H
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (06) : 1860 - &
[2] EDWARDS R, 1964, P IEEE, VED11, P286
[3] LOWERING BREAKDOWN VOLTAGE OF SILICON P-N JUNCTIONS BY STRESS
GOETZBERGER, A
FINCH, RH
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (06) : 1851 - &
[4] EFFECT OF UNIAXIAL STRESS ON GERMANIUM P-N JUNCTIONS
IMAI, T
UCHIDA, M
SATO, H
KOBAYASHI, A
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1965, 4 (02) : 102 - +
[5] MINORITY CARRIER LIFETIME IN UNIAXIALLY STRESSED GERMANIUM
MATUKURA, Y
MIURA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1965, 4 (01) : 72 - &
[6] RESISTANCE OF ELASTICALLY DEFORMED SHALLOW P-N JUNCTIONS .2.
RINDNER, W
BRAUN, I
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (07) : 1958 - &
[7] RINDNER W, IN PRESS
[8] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS
SAH, CT
NOYCE, RN
SHOCKLEY, W
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09): : 1228 - 1243
[9] EFFECT OF MECHANICAL STRESS ON P-N JUNCTION DEVICE CHARACTERISTICS
WORTMAN, JJ
BURGER, RM
HAUSER, JR
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (07) : 2122 - &