DETERMINATION OF THE ELECTRICAL LEVEL OF VACANCY IN ELECTRON-IRRADIATED P-TYPE SILICON

被引：10

作者：

MUKASHEV, BN

FROLOV, VV

KOLODIN, LG

机构：

来源：

PHYSICS LETTERS A | 1982年 / 91卷 / 07期

关键词：

D O I：

10.1016/0375-9601(82)90433-9

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：358 / 360

页数：3

共 9 条

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BARAFF, GA ;

KANE, EO ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1980, 21 (12) :5662-5686

[2] SIMPLE PARAMETRIZED MODEL FOR JAHN-TELLER SYSTEMS - VACANCY IN P-TYPE SILICON [J].

BARAFF, GA ;

KANE, EO ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1980, 21 (08) :3563-3570

[3] SILICON VACANCY - POSSIBLE ANDERSON NEGATIVE-U SYSTEM [J].

BARAFF, GA ;

KANE, EO ;

SCHLUTER, M .

PHYSICAL REVIEW LETTERS, 1979, 43 (13) :956-959

[4] STUDY OF PRIMARY AND SECONDARY RADIATION DEFECTS FORMATION AND ANNEALING IN PARA-TYPE SILICON [J].

MUKASHEV, BN ;

KOLODIN, LG ;

NUSSUPOV, KH ;

SPITSYN, AV ;

VAVILOV, VS .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 46 (1-2) :79-84

[5] INTERSTITIAL BORON IN SILICON - A NEGATIVE-U SYSTEM [J].

TROXELL, JR ;

WATKINS, GD .

PHYSICAL REVIEW B, 1980, 22 (02) :921-931

[6] NEGATIVE-U PROPERTIES FOR POINT-DEFECTS IN SILICON [J].

WATKINS, GD ;

TROXELL, JR .

PHYSICAL REVIEW LETTERS, 1980, 44 (09) :593-596

[7]

WATKINS GD, 1978, DEFECTS RAD EFFECTS, P16

[8]

WATKINS GD, 1980, DEFECTS RAD EFFECTS, P199

[9]

WATKINS GD, 1974, LATTICE DEFECTS SEMI, P1

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