MICROWAVE PNP ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR

被引：5

作者：

BAYRAKTAROGLU, B ^{[1
]}

CAMILLERI, N ^{[1
]}

LAMBERT, SA ^{[1
]}

机构：

[1] VARO INC,GARLAND,TX 75042

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 04期

关键词：

SEMICONDUCTING ALUMINUM COMPOUNDS - Microwaves;

D O I：

10.1049/el:19880152

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The microwave performance of a pnp AlGaAs/GaAs heterojunction bipolar transistor was demonstrated. Common emitter current gains of 60 were obtained using MOCVD grown structures with 100nm thick base layers and self-aligned emitter-base contacts. f//t and f//m//a//x values were 12 and 20 GHz, respectively. Under common-base configuration, 8 db gain was obtained at 10 GHz. Device performance was characterised under cw and pulsed conditions.

引用

页码：228 / 229

页数：2

共 6 条

[1]

Asbeck P. M., 1987, IEEE 1987 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers (Cat. No.87CH2478-6), P1

[2]

BAYRAKTAROGLU B, 1987, IEEE T MICROW THEORY, P969

[3] A PNP ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR [J].

CHAND, N ;

HENDERSON, T ;

FISCHER, R ;

KOPP, W ;

MORKOC, H ;

GIACOLETTO, LJ .

APPLIED PHYSICS LETTERS, 1985, 46 (03) :302-304

[4] AP-N-P ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR FOR HIGH-TEMPERATURE OPERATION [J].

FROST, MS ;

RICHES, M ;

KERR, T .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (06) :2149-2153

[5] HIGH-PERFORMANCE P-N-P ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS - A THEORETICAL-ANALYSIS [J].

HUTCHBY, JA .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (02) :108-111

[6] OPTIMIZING N-P-N AND P-N-P HETEROJUNCTION BIPOLAR-TRANSISTORS FOR SPEED [J].

SUNDERLAND, DA ;

DAPKUS, PD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (02) :367-377

← 1 →