LOW-TEMPERATURE SPECIFIC-HEAT AND RESISTIVITY OF SINGLE-CRYSTALLINE PD2SI

被引：10

作者：

LABORDE, O

LASJAUNIAS, JC

MARANI, R

ROUAULT, A

MADAR, R

机构：

[1] ECOLE NATL SUPER INGN ELECTR GRENOBLE,INST NATL POLYTECH GRENOBLE,F-38042 ST MARTIN DHERES,FRANCE

[2] UNIV MODENA,DEPT PHYS,I-41100 MODENA,ITALY

[3] CNRS,SERV NATL CHAMPS INTENSES,F-38042 GRENOBLE,FRANCE

来源：

PHYSICAL REVIEW B | 1990年 / 41卷 / 14期

关键词：

D O I：

10.1103/PhysRevB.41.9721

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present specific-heat (0.2 KT7.5 K) and resistivity (4.2 KT300 K) measurements on well-characterized, high-quality, single crystals of Pd2Si. The anisotropy of the electronic band structure reflects on the electronic conductivity and on the strong variation of the Debye temperature at low temperature. © 1990 The American Physical Society.

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页码：9721 / 9724

页数：4

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