MECHANISM OF DISPERSIVE TRANSPORT IN HYDROGENATED AMORPHOUS-SILICON

被引：9

作者：

SHIRAFUJI, J

MATSUI, H

INUISHI, Y

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 07期

关键词：

D O I：

10.1063/1.332576

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3983 / 3986

页数：4

共 23 条

[1] HOLE DRIFT MOBILITY IN AMORPHOUS SILICON [J].

ALLAN, D .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 38 (04) :381-392

[2]

CRAWFORD JH, 1975, POINT DEFECTS SOLIDS, V2, P324

[3] DISPERSIVE TRANSPORT AND RECOMBINATION LIFETIME IN PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON [J].

HVAM, JM ;

BRODSKY, MH .

PHYSICAL REVIEW LETTERS, 1981, 46 (05) :371-374

[4] CARRIER PROPAGATION IN SPUTTERED A-SI-H [J].

KIRBY, PB ;

PAUL, W .

PHYSICAL REVIEW B, 1982, 25 (08) :5373-5383

[5] ELECTRONIC TRANSPORT IN AMORPHOUS SILICON FILMS [J].

LECOMBER, PG ;

SPEAR, WE .

PHYSICAL REVIEW LETTERS, 1970, 25 (08) :509-&

[6] TRAP-LIMITED MODEL FOR DISPERSIVE TRANSPORT IN SEMICONDUCTORS [J].

MARSHALL, JM .

PHILOSOPHICAL MAGAZINE, 1977, 36 (04) :959-975

[7] EQUIVALENCE OF MULTIPLE-TRAPPING MODEL AND TIME-DEPENDENT RANDOM-WALK [J].

NOOLANDI, J .

PHYSICAL REVIEW B, 1977, 16 (10) :4474-4479

[8] THERMALIZATION AND RECOMBINATION IN AMORPHOUS-SEMICONDUCTORS [J].

ORENSTEIN, J ;

KASTNER, MA .

SOLID STATE COMMUNICATIONS, 1981, 40 (01) :85-89

[9] TRANSIENT PHOTOCONDUCTIVITY AND PHOTOINDUCED OPTICAL-ABSORPTION IN AMORPHOUS-SEMICONDUCTORS [J].

ORENSTEIN, J ;

KASTNER, MA ;

VANINOV, V .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 46 (01) :23-62

[10] DISPERSIVE (NON-GAUSSIAN) TRANSIENT TRANSPORT IN DISORDERED SOLIDS [J].

PFISTER, G ;

SCHER, H .

ADVANCES IN PHYSICS, 1978, 27 (05) :747-798

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