FORMATION OF BURIED INSULATING LAYERS BY HIGH-DOSE OXYGEN IMPLANTATION UNDER CONTROLLED TEMPERATURE CONDITIONS

被引：14

作者：

BRUEL, M

MARGAIL, J

STOEMENOS, J

MARTIN, P

JAUSSAUD, C

机构：

来源：

关键词：

D O I：

10.1016/0042-207X(85)90321-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：589 / 593

页数：5

共 21 条

[11] SYNTHESIS OF SILICON DIOXIDE BY ION-IMPLANTATION [J].

WILSON, IH .

WILSON, SR ;

FATHY, D .

[13]

Ziegler J. F, 1977, STOPPING RANGES IONS, V4

[14]

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