PHOTOREFLECTION STUDY ON THE SURFACE ELECTRIC-FIELD OF DELTA-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：14

作者：

LIU, DG ^{[1
]}

CHANG, KH ^{[1
]}

LEE, CP ^{[1
]}

HSU, TM ^{[1
]}

TIEN, YC ^{[1
]}

机构：

[1] NATL CENT UNIV,DEPT PHYS,CHUNGLI,TAIWAN

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 72卷 / 04期

关键词：

D O I：

10.1063/1.351710

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoreflectance spectroscopy has been used to study the surface electric-field strength and the surface potential of delta-doped GaAs. Franz-Keldysh oscillations in the reflectance spectra were clearly observed and the oscillation periods were used to calculate the internal electric fields of the delta-doped samples. Based on the measured results and the self-consistent calculation, a surface potential of 0.6 eV is obtained.

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页码：1468 / 1472

页数：5

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