PHOTOREFLECTANCE CHARACTERIZATION OF SURFACE FERMI LEVEL IN AS-GROWN GAAS(100)

被引：57

作者：

KANATA, T

MATSUNAGA, M

TAKAKURA, H

HAMAKAWA, Y

NISHINO, T

机构：

[1] OSAKA UNIV,FAC ENGN SCI,DEPT ELECT ENGN,TOYONAKA,OSAKA 560,JAPAN

[2] KOBE UNIV,FAC ENGN,DEPT ELECT ENGN,KOBE 657,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 10期

关键词：

D O I：

10.1063/1.347023

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoreflectance (PR) spectroscopy has been used to study the surface Fermi level in GaAs by taking account of photovoltaic properties at the semiconductor surface. The PR signal amplitude ∥ΔR/R∥ is proportional to a modulating photovoltage Vm generated by a modulation light irradiation. To modify the surface potential, the sample was irradiated by a third perturbing light, i.e., a continuous bias light Pb, together with the modulation light. The modulation light power dependence of ∥ΔR/R∥ is extremely sensitive to bias light intensity, surface Fermi level, and temperature. From the analysis of the temperature dependence of ∥ΔR/R∥ on modulation-light power, the surface Fermi level of 0.47±0.09 eV below the conduction band was determined for a molecular beam epitaxially-grown GaAs(100).

引用

页码：5309 / 5313

页数：5

共 22 条

[1] DOPANT CONCENTRATION DEPENDENCES AND SYMMETRIC FERMI-LEVEL MOVEMENT FOR METAL N-TYPE AND P-TYPE GAAS(110) INTERFACES FORMED AT 60-K [J].