FORMATION OF SILICIDES BY RAPID THERMAL ANNEALING OVER POLYCRYSTALLINE SILICON

被引：8

作者：

NARAYAN, J

STEPHENSON, TA

BRAT, T

FATHY, D

PENNYCOOK, SJ

机构：

[1] OAK RIDGE NATL LAB,DIV SOLID STATE,OAK RIDGE,TN 37831

[2] MICROELECTR CTR NORTH CAROLINA,RES TRIANGLE PK,NC 27709

来源：

关键词：

D O I：

10.1063/1.337404

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：631 / 634

页数：4

共 10 条

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[2]

BRAT T, UNPUB J ELECTROCHEM

GAT, A .

ELECTRON DEVICE LETTERS, 1981, 2 (04) :85-87

[4]

Lau C. K., 1982, International Electron Devices Meeting. Technical Digest, P714

[5] REFRACTORY SILICIDES FOR INTEGRATED-CIRCUITS [J].

MURARKA, SP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (04) :775-792

[6]

OSBURN CM, 1982, 1ST P INT S VLSI SCI, P213

PENNYCOOK, SJ ;

NARAYAN, J .

[8]

Shibata T., 1981, International Electron Devices Meeting, P647

[9]

TING CY, 1982, 1ST P INT S VLSI SCI, P224

[10]

WANG CY, 1985, J ELECTROCHEM SOC, V85, P466