APPLICATION OF CHANNELING SCANNING-TRANSMISSION ION MICROSCOPY

被引：8

作者：

CHOLEWA, M ^{[1
]}

BENCH, G ^{[1
]}

SAINT, A ^{[1
]}

LEGGE, GJF ^{[1
]}

WIELUNSKI, L ^{[1
]}

机构：

[1] CSIRO,DIV APPL PHYS,LUCAS HTS RES ESTAB,SUTHERLAND,NSW 2232,AUSTRALIA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1991年 / 56-7卷

基金：

澳大利亚研究理事会;

关键词：

D O I：

10.1016/0168-583X(91)95030-H

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Scanning transmission ion microscopy (STIM) has been used in conjunction with channeling, to explore transmission channeling in thin epitaxially grown n-type silicon crystal. 1 MeV H+ beams and 2.5 MeV alpha beams were used with beam currents of 0.1 fA focussed to spot sizes < 200 nm. Part of the sample was damaged in the channel and a random direction with the same beams focussed to a approximately 15-mu-m diameter spot size and current up to 2 nA. Theoretical calculations predict the general behaviour of collected energy spectra in both the random and the channel direction. The channeling STIM (CSTIM) technique can be 100% efficient, the analysis is achieved in a short time with negligible damage compared to backscattering channeling contrast microscopy (CCM), and it is capable of very high resolution (50 nm). These features can be successfully applied to the investigation of crystal damage and small size imperfections in samples transparent to the beam.

引用

页码：795 / 798

页数：4

共 19 条

[1]

ANDERSON HH, 1977, HYDROGEN STOPPING PO, V3

[2] CHANNELING EFFECTS IN ENERGY LOSS OF 3-11-MEV PROTONS IN SILICON AND GERMANIUM SINGLE CRYSTALS [J].

APPLETON, BR ;

ERGINSOY, C ;

GIBSON, WM .

PHYSICAL REVIEW, 1967, 161 (02) :330-&

[3] HIGH-RESOLUTION STIM [J].

BENCH, GS ;

LEGGE, GJF .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 40-1 :655-658

[4] HIGH-RESOLUTION CHANNELING STIM IN A THIN CRYSTAL [J].

CHOLEWA, M ;

BENCH, G ;

SAINT, A ;

LEGGE, GJF .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 54 (1-3) :397-400

[5] CHANNELING SCANNING-TRANSMISSION ION MICROSCOPY [J].

CHOLEWA, M ;

BENCH, G ;

LEGGE, GJF ;

SAINT, A .

APPLIED PHYSICS LETTERS, 1990, 56 (13) :1236-1238

[6]

DELLAMEA G, 1971, PHYS REV LETT, V27, P1194

[7]

DELLAMEA G, 1972, RADIAT EFF, V13, P115

[8]

Eisen F.H., 1972, RADIAT EFF, V13, P93, DOI [10.1080/00337577208231165, DOI 10.1080/00337577208231165]

[9] SEMICONDUCTOR ANALYSIS WITH A CHANNELED HELIUM MICROBEAM [J].

INGARFIELD, SA ;

MCKENZIE, CD ;

SHORT, KT ;

WILLIAMS, JS .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1981, 191 (1-3) :521-526

[10] THE ANGULAR-DEPENDENCE OF ENERGY-LOSS OF CHANNELED 2 MEV HELIUM-IONS ALONG SI(100) AXIS [J].

JIN, HS ;

GIBSON, WM .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 13 (1-3) :76-80

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