FABRICATION OF ULTRASMALL DEVICES ON THIN ACTIVE GAAS MEMBRANES

被引：7

作者：

LEE, KY

FROST, J

STANLEY, C

PATRICK, W

MACKIE, WS

BEAUMONT, SP

WILKINSON, CDW

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 01期

关键词：

D O I：

10.1116/1.583893

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：322 / 325

页数：4

共 13 条

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[3]

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[4] ELECTRONS AT A SEMICONDUCTOR HETEROJUNCTION SUBJECT TO A PERIODIC BIASING POTENTIAL [J].

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[5]

MACKIE WS, 1985, SOLID STATE TECHNOLO, V28, P117

[6]

MACKIE WS, 1983, 10TH P INT C EL ION

[7]

MACKIE WS, 1982, P MICROCIRCUIT ENG 8

[8] LOW-TEMPERATURE ANNEALED CONTACTS TO VERY THIN GAAS EPILAYERS [J].

PATRICK, W ;

MACKIE, WS ;

BEAUMONT, SP ;

WILKINSON, CDW .

APPLIED PHYSICS LETTERS, 1986, 48 (15) :986-988

[9] VERY SHORT GATE-LENGTH GAAS-MESFETS [J].

PATRICK, W ;

MACKIE, WS ;

BEAUMONT, SP ;

WILKINSON, CDW ;

OXLEY, CH .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (09) :471-472

[10]

PATRICK W, 1985, 29TH P INT S EL ION

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