VAPOR-PHASE EPITAXY OF HIGH-PURITY III-V-COMPOUNDS

被引：6

作者：

CARDWELL, MJ

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1984年 / 70卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(84)90251-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：97 / 102

页数：6

共 35 条

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[2]

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[3]

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MOORE, GE .

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[7] A STUDY OF VAPOR-PHASE EPITAXY OF INDIUM-PHOSPHIDE [J].

FAIRHURST, K ;

LEE, D ;

ROBERTSON, DS ;

PARFITT, HT ;

WILGOSS, WHE .

JOURNAL OF MATERIALS SCIENCE, 1981, 16 (04) :1013-1022

[8] THE GROWTH OF EPITAXIAL INP BY THE CHLORIDE PROCESS IN NITROGEN AND IN THE PRESENCE OF PHOSPHINE [J].

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[9]

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[10]

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