TEMPERATURE PROCESSING EFFECTS IN PROTON-IMPLANTED N-TYPE GAAS

[1] Bourgoin J., 1983, SPRINGER SER SOLID S, V35

[2] OPTICAL PROPERTIES OF GALLIUM ARSENIDE-PHOSPHIDE [J]. PHYSICAL REVIEW, 1967, 156 (03): : 913 - +

[3] MULTIPLE-ENERGY PROTON-BOMBARDMENT IN N+-GAAS [J]. SOLID-STATE ELECTRONICS, 1977, 20 (03) : 183 - 189

[4] ISOLATION OF JUNCTION DEVICES IN GAAS USING PROTON BOMBARDMENT [J]. SOLID-STATE ELECTRONICS, 1969, 12 (04) : 209 - &

[5] OPTICAL WAVEGUIDING IN PROTON-IMPLANTED GAAS [J]. APPLIED PHYSICS LETTERS, 1972, 21 (03) : 87 - +

[6] GLASER A, 1979, INTEGRATED CIRCUIT E, P16

[7] Grosse P., 1979, FREIE ELEKTRONEN FES

[8] HARRISON HB, 1980, J APPL PHYS, V55, P2935

[9] INFRARED REFLECTANCE STUDIES OF BULK AND EPITAXIAL-FILM N-TYPE GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (01) : 212 - 223

[10] HUNSPERGER R, 1982, SPRINGER SER OPT SCI, V33

[1] Bourgoin J., 1983, SPRINGER SER SOLID S, V35

[2] OPTICAL PROPERTIES OF GALLIUM ARSENIDE-PHOSPHIDE [J]. PHYSICAL REVIEW, 1967, 156 (03): : 913 - +

[3] MULTIPLE-ENERGY PROTON-BOMBARDMENT IN N+-GAAS [J]. SOLID-STATE ELECTRONICS, 1977, 20 (03) : 183 - 189

[4] ISOLATION OF JUNCTION DEVICES IN GAAS USING PROTON BOMBARDMENT [J]. SOLID-STATE ELECTRONICS, 1969, 12 (04) : 209 - &

[5] OPTICAL WAVEGUIDING IN PROTON-IMPLANTED GAAS [J]. APPLIED PHYSICS LETTERS, 1972, 21 (03) : 87 - +

[6] GLASER A, 1979, INTEGRATED CIRCUIT E, P16

[7] Grosse P., 1979, FREIE ELEKTRONEN FES

[8] HARRISON HB, 1980, J APPL PHYS, V55, P2935

[9] INFRARED REFLECTANCE STUDIES OF BULK AND EPITAXIAL-FILM N-TYPE GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (01) : 212 - 223

[10] HUNSPERGER R, 1982, SPRINGER SER OPT SCI, V33