THE EFFECT OF CARBON ON OXYGEN PRECIPITATION IN HIGH-CARBON CZ SILICON-CRYSTALS

被引：10

作者：

KUNG, CY

FORBES, L

PENG, JD

机构：

来源：

MATERIALS RESEARCH BULLETIN | 1983年 / 18卷 / 12期

关键词：

D O I：

10.1016/0025-5408(83)90181-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1437 / 1441

页数：5

共 10 条

[1]

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[2]

FORBES L, 1982, MATERIALS RES SOC S

[3]

GOSELE U, 1983, DEFECTS SEMICONDUCTO, V2, P45

[4]

INOUE N, 1981, SEMICONDUCTOR SILICO, P281

[5] THERMALLY INDUCED MICRODEFECTS IN CZOCHRALSKI-GROWN SILICON - NUCLEATION AND GROWTH-BEHAVIOR [J].

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MATSUSHITA, Y ;

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IIZUKA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (01) :1-12

[6] THERMALLY INDUCED MICRODEFECTS IN CZOCHRALSKI-GROWN SILICON-CRYSTALS [J].

MATSUSHITA, Y .

JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) :516-525

[7]

PENG JD, INTERNAL REPORT

[8]

Pinizzotto R. F., 1981, Defects in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P387

[9]

TAN TY, 1983, EL SOC EXT ABSTR, P432

[10] PRECIPITATION OF OXYGEN IN DISLOCATION-FREE SILICON [J].

TEMPELHOFF, K ;

SPIEGELBERG, F ;

GLEICHMANN, R ;

WRUCK, D .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 56 (01) :213-223

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