THERMALLY INDUCED MICRODEFECTS IN CZOCHRALSKI-GROWN SILICON-CRYSTALS

[1] AOKI Y, 1978, ELECTROCHEM SOC M, V78, P554

[2] CRAVEN RA, 1981, SEMICONDUCTOR SILICO, P254

[3] PRECIPITATION OF OXYGEN IN SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 30 (01) : 31 - 33

[4] INOUE N, 1979, ELECTROCHEM SOC M, P1358

[5] INOUE N, 1981, SEMICONDUCTOR SILICO, P282

[6] CARBON AND OXYGEN ROLE FOR THERMALLY INDUCED MICRODEFECT FORMATION IN SILICON-CRYSTALS [J]. APPLIED PHYSICS LETTERS, 1979, 35 (03) : 213 - 215

[7] KISHINO S, UNPUB JAPAN J APPL P

[8] KISHINO S, 1980, JAPAN J APPL PHYS, V19, pL486

[9] MODEL FOR FORMATION OF STACKING-FAULTS IN SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 30 (02) : 73 - 75

[10] A STUDY ON THERMALLY INDUCED MICRODEFECTS IN CZOCHRALSKI-GROWN SILICON-CRYSTALS - DEPENDENCE ON ANNEALING TEMPERATURE AND STARTING MATERIALS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (02) : L101 - L104

[1] AOKI Y, 1978, ELECTROCHEM SOC M, V78, P554

[2] CRAVEN RA, 1981, SEMICONDUCTOR SILICO, P254

[3] PRECIPITATION OF OXYGEN IN SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 30 (01) : 31 - 33

[4] INOUE N, 1979, ELECTROCHEM SOC M, P1358

[5] INOUE N, 1981, SEMICONDUCTOR SILICO, P282

[6] CARBON AND OXYGEN ROLE FOR THERMALLY INDUCED MICRODEFECT FORMATION IN SILICON-CRYSTALS [J]. APPLIED PHYSICS LETTERS, 1979, 35 (03) : 213 - 215

[7] KISHINO S, UNPUB JAPAN J APPL P

[8] KISHINO S, 1980, JAPAN J APPL PHYS, V19, pL486

[9] MODEL FOR FORMATION OF STACKING-FAULTS IN SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 30 (02) : 73 - 75

[10] A STUDY ON THERMALLY INDUCED MICRODEFECTS IN CZOCHRALSKI-GROWN SILICON-CRYSTALS - DEPENDENCE ON ANNEALING TEMPERATURE AND STARTING MATERIALS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (02) : L101 - L104