ELLIPSOMETRY FOR THIN-FILM AND SURFACE-ANALYSIS

被引：34

作者：

COLLINS, RW ^{[1
]}

KIM, YT ^{[1
]}

机构：

[1] PENN STATE UNIV,DEPT PHYS,UNIVERSITY PK,PA 16802

来源：

ANALYTICAL CHEMISTRY | 1990年 / 62卷 / 17期

关键词：

D O I：

10.1021/ac00216a001

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

[No abstract available]

引用

页码：A887 / &

共 31 条

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ARWIN, H ;

ASPNES, DE .

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[2]

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[3]

Aspnes D. E., 1988, Proceedings of the SPIE - The International Society for Optical Engineering, V946, P84, DOI 10.1117/12.947416

[4]

Aspnes D. E., 1976, OPTICAL PROPERTIES S, P801

[5] HIGH PRECISION SCANNING ELLIPSOMETER [J].

ASPNES, DE ;

STUDNA, AA .

APPLIED OPTICS, 1975, 14 (01) :220-228

[6] DIELECTRIC-PROPERTIES OF HEAVILY DOPED CRYSTALLINE AND AMORPHOUS-SILICON FROM 1.5 TO 6.0 EV [J].

ASPNES, DE ;

STUDNA, AA ;

KINSBRON, E .

PHYSICAL REVIEW B, 1984, 29 (02) :768-779

[7] DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].

ASPNES, DE ;

STUDNA, AA .

PHYSICAL REVIEW B, 1983, 27 (02) :985-1009

[8]

Azzam R. M. A., 1977, ELLIPSOMETRY POLARIZ

[9]

BASHARA NM, 1969, P S RECENT DEV ELLIP

[10]

BASHARA NM, 1969, SURF SCI, V16

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