X-RAY DOUBLE AND TRIPLE CRYSTAL DIFFRACTOMETRY OF SILICON-CRYSTALS WITH SMALL DEFECTS

被引：26

作者：

HOLY, V

KUBENA, J

机构：

[1] Department of Solid State Physics, Faculty of Science, Masaryk University

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1992年 / 170卷 / 01期

关键词：

D O I：

10.1002/pssb.2221700102

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Intensities of X-ray diffuse scattering are calculated on the basis of the kinematical approximation of the statistical dynamical diffraction theory for crystals with randomly distributed small defects. Various approaches are derived for defect parameter determination (the density, size, and strength of defects) and some of them are compared with previously published X-ray methods. The theoretical results obtained for two various defect models are proved by double and triple crystal diffractometry measurements.

引用

页码：9 / 25

页数：17

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