AN UNBALANCED MAGNETRON SPUTTERING DEVICE FOR LOW AND MEDIUM PRESSURES

被引:5
作者
MURALIDHAR, GK [1 ]
MUSIL, J [1 ]
KADLEC, S [1 ]
机构
[1] ACAD SCI CZECH REPUBL,INST PHYS,CR-18040 PRAGUE 8,CZECH REPUBLIC
关键词
D O I
10.1063/1.1146181
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The discharge characteristics of an unbalanced magnetron sputtering device, equipped with a 100-mm-diam planar circular target and with two electromagnetic coils, have been analyzed in a range of operation pressures from 0.02 to 1 Pa. The variation of discharge extinction and ignition pressures and target voltage is presented as a function of the ratio of currents in the magnetron coils and discharge current. A maximum discharge current beyond which it is not possible to sustain the discharge at low pressures has been observed, This extinction current increases with operating pressures. An explanation for the effect is based on the loss of gas from the plasma due to gas heating with energetic sputtered particles and subsequent gas density rarefaction in the near target region. Higher pressure is thus necessary to keep constant gas density in the magnetron plasma when the discharge current is increased. The magnetic field configuration is presented for several values of the ratio of currents in the magnetron coils and correlated to the variation of discharge extinction and ignition pressures, extinction current, and target voltage. The low pressure operation of the magnetron strongly depends on optimization of the magnetic field shape on the sputtered target. The deposition rate of titanium films is a linear function of magnetron power up to 2.5 kW and does not depend on Ar pressure in the pressure range studied (0.08-0.6 Pa). (C) 1995 American Institute of Physics.
引用
收藏
页码:4961 / 4966
页数:6
相关论文
共 16 条
[1]   REACTIVE SPUTTERING WITH AN UNBALANCED MAGNETRON [J].
HOWSON, RP ;
JAFER, HA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04) :1784-1790
[2]   COMPUTATIONAL STUDIES ON THE SHAPE AND CONTROL OF PLASMAS IN MAGNETRON SPUTTERING SYSTEMS [J].
IDO, S ;
NAKAMURA, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (12A) :5698-5702
[3]   OPTIMIZED MAGNETIC-FIELD SHAPE FOR LOW-PRESSURE MAGNETRON SPUTTERING [J].
KADLEC, S ;
MUSIL, J .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1995, 13 (02) :389-393
[4]   SPUTTERING SYSTEMS WITH MAGNETICALLY ENHANCED IONIZATION FOR ION PLATING OF TIN FILMS [J].
KADLEC, S ;
MUSIL, J ;
MUNZ, WD .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1990, 8 (03) :1318-1324
[5]  
KADLEC S, 1994, UNPUB 4TH P EUR VAC
[6]  
KADLEC S, 1991, J VAC SCI TECHNOL A, V9, P1171
[7]  
MUSIL J, 1989, VACUUM, V40, P435
[8]   FACING TARGETS TYPE OF SPUTTERING METHOD FOR DEPOSITION OF MAGNETIC METAL-FILMS AT LOW-TEMPERATURE AND HIGH-RATE [J].
NAOE, M ;
YAMANAKA, SI ;
HOSHI, Y .
IEEE TRANSACTIONS ON MAGNETICS, 1980, 16 (05) :646-648
[9]  
PALICKI DP, 1993, FINISHING, V36
[10]   COMPARISON OF MAGNETRON SPUTTER-DEPOSITION CONDITIONS IN NEON, ARGON, KRYPTON, AND XENON DISCHARGES [J].
PETROV, I ;
IVANOV, I ;
ORLINOV, V ;
SUNDGREN, JE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1993, 11 (05) :2733-2741