A NOVEL METHOD TO DETECT NON-EXPONENTIAL TRANSIENTS IN DEEP LEVEL TRANSIENT SPECTROSCOPY

被引:34
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THURBER, WR
FORMAN, RA
PHILLIPS, WE
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10.1063/1.330108
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O59 [应用物理学];
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页码:7397 / 7400
页数:4
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共 12 条
[1]   X-Y PLOTTER CAPACITANCE METER INTERFACE FOR DEEP LEVEL SPECTROSCOPY [J].
BALLAND, B ;
MARCHAND, JJ ;
BRIOT, R ;
GRANGE, G .
JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1981, 14 (03) :367-372
[2]   ENERGY-LEVELS IN SILICON [J].
CHEN, JW ;
MILNES, AG .
ANNUAL REVIEW OF MATERIALS SCIENCE, 1980, 10 :157-228
[3]   TRANSIENT DISTORTION AND NTH ORDER FILTERING IN DEEP LEVEL TRANSIENT SPECTROSCOPY (DNLTS) [J].
CROWELL, CR ;
ALIPANAHI, S .
SOLID-STATE ELECTRONICS, 1981, 24 (01) :25-36
[4]   INFLUENCE OF DEEP TRAPS ON MEASUREMENT OF FREE-CARRIER DISTRIBUTIONS IN SEMICONDUCTORS BY JUNCTION CAPACITANCE TECHNIQUES [J].
KIMERLING, LC .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) :1839-1845
[5]   THE ANALYSIS OF EXPONENTIAL AND NON-EXPONENTIAL TRANSIENTS IN DEEP-LEVEL TRANSIENT SPECTROSCOPY [J].
KIRCHNER, PD ;
SCHAFF, WJ ;
MARACAS, GN ;
EASTMAN, LF ;
CHAPPELL, TI ;
RANSOM, CM .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) :6462-6470
[6]   NOVEL VARIABLE-TEMPERATURE CHUCK FOR USE IN THE DETECTION OF DEEP LEVELS IN PROCESSED SEMICONDUCTOR WAFERS [J].
KOYAMA, RY ;
BUEHLER, MG .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1979, 50 (08) :983-987
[7]   DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].
LANG, DV .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032
[8]  
LARRABEE RD, 1981, NBSIR812325 ANN REP
[9]   TRANSIENT DISTORTION AND DLTS [J].
NORAS, JM .
SOLID STATE COMMUNICATIONS, 1981, 39 (11) :1225-1227
[10]   FREQUENCY DEPENDENCE OF REVERSE-BIASED CAPACITANCE OF GOLD-DOPED SILICON P+N STEP JUNCTIONS [J].
SAH, CT ;
REDDI, VGK .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) :345-+