X-Y PLOTTER CAPACITANCE METER INTERFACE FOR DEEP LEVEL SPECTROSCOPY

被引：8

作者：

BALLAND, B ^{[1
]}

MARCHAND, JJ ^{[1
]}

BRIOT, R ^{[1
]}

GRANGE, G ^{[1
]}

机构：

[1] INST NATL SCI APPL LYON,GENIE ELECT & FERROELECT LAB,F-69621 VILLEURBANNE,FRANCE

来源：

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS | 1981年 / 14卷 / 03期

关键词：

D O I：

10.1088/0022-3735/14/3/023

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：367 / 372

页数：6

共 16 条

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[Anonymous], 1977, SEMICONDUCTOR LASERS

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[4]

BALLAND B, 1978, DGRSTPE7771633 RAPP

[5]

BALLAND B, 1976, DGRSTPE7570813 RAPP

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[8] WAVE-FUNCTIONS AND OPTICAL CROSS-SECTIONS ASSOCIATED WITH DEEP CENTERS IN SEMICONDUCTORS [J].

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PHYSICAL REVIEW B, 1977, 16 (08) :3694-3706

[9] NEW DEVELOPMENTS IN DEFECT STUDIES IN SEMICONDUCTORS [J].

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IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) :1497-1505

[10] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032

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