NEW LASER-PLASMA SOURCE FOR EXTREME-ULTRAVIOLET LITHOGRAPHY

被引：62

作者：

JIN, F

RICHARDSON, M

机构：

[1] Center for Research and Education in Optics and Lasers, University of Central Florida, Orlando, FL, 32826

来源：

APPLIED OPTICS | 1995年 / 34卷 / 25期

关键词：

D O I：

10.1364/AO.34.005750

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

As the demands of lithographic fabrication of computer chips push toward ever-decreasing feature sizes, projection extreme-ultraviolet (EUV) lithography becomes an increasingly attractive technology. The radiation source of choice for this approach is a laser plasma with a high repetition rate. We report an investigation of a new candidate laser plasma source for EUV lithography that is based on line emission from ice-water targets. This radiation source has the potential to meet all the strict requirements of EUV conversion, debris elimination, operation, and cost for a demonstration lithographic system.

引用

页码：5750 / 5760

页数：11

共 24 条

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