STOICHIOMETRIC DRY ETCHING OF MERCURY CADMIUM TELLURIDE USING A SECONDARY AFTERGLOW REACTOR

被引：21

作者：

SPENCER, JE

DINAN, JH

BOYD, PR

WILSON, H

BUTTRILL, SE

机构：

[1] CTR NIGHT VIS & ELECTROOPT,AMSEL,RD,NV,IT,FT BELVOIR,VA 22060

[2] CHARLES EVANS & ASSOC,REDWOOD CITY,CA 94063

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 03期

关键词：

D O I：

10.1116/1.575864

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：676 / 681

页数：6

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