LIGHT-EMISSION FROM SILICON NANOSTRUCTURES PRODUCED BY CONVENTIONAL LITHOGRAPHIC AND REACTIVE ION ETCHING TECHNIQUES

被引：19

作者：

NASSIOPOULOS, AG ^{[1
]}

GRIGOROPOULOS, S ^{[1
]}

PAPADIMITRIOU, D ^{[1
]}

GOGOLIDES, E ^{[1
]}

机构：

[1] NATL TECH UNIV ATHENS,DEPT PHYS,GR-15310 ATHENS,GREECE

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1995年 / 190卷 / 01期

关键词：

D O I：

10.1002/pssb.2221900114

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Sub-ten nanometer diameter silicon pillars and silicon walls of the same thickness are Fabricated by using conventional optical lithography based on deep-UV exposure and reactive ion etching using fluorine only containing gases. The produced structures are studied for their luminescence properties. Visible photoluminescence with a peak in the range 580 to 650 nm is observed under Ar laser irradiation.

引用

页码：91 / 95

页数：5

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