HIGH-RESOLUTION TIME-OF-FLIGHT MASS-SPECTROSCOPY STUDY OF SYNCHROTRON-RADIATION-INDUCED CHEMICAL-REACTIONS ON SI(100)

The intermediate species involved in synchrotron-radiation-excited Si epitaxy using Si2H6 was identified. High-resolution time-of-flight mass spectroscopy from Si2H6-chemisorbed Si(100) clearly resolved the stimulated desorption of bulk and surface H+ associated with H2+. The H2+ arises from the dihydride and the surface H+ from both monohydrides and dihydrides, contributing to the surface growth channel by regeneration of dangling bonds. The gas-phase growth channel is characterized by the species of H+, H2+, SiHx+, and Si2Hy+ resulting from Si2H6 photolysis. © 1995 The American Physical Society.