SI CRYSTAL-GROWTH MEDIATED BY SYNCHROTRON-RADIATION-STIMULATED HYDROGEN DESORPTION

被引：28

作者：

AKAZAWA, H

UTSUMI, Y

URISU, T

NAGASE, M

机构：

[1] NTT LSI Laboratories, Atsugi, Kanagawa 243-01, 3-1, Morinosato-Wakamiya

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.47.15946

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Si crystal growth on Ge(100) resulting from surface photochemical reaction is achieved using atomic layer epitaxy, alternating disilane exposure, and irradiation with synchrotron radiation. Self-limiting chemisorption with fractional SiH(x); coverage and partial hydrogen removal in stimulated desorption results in a constant growth rate of 0.2 ML/cycle below thermal growth temperatures. The effects of gas and adsorbate excitation in photochemical vapor deposition are experimentally separated.

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页码：15946 / 15949

页数：4

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