PLANAR DOPING BY INTERRUPTED MOVPE GROWTH OF GAAS

被引：17

作者：

OHNO, H

IKEDA, E

HASEGAWA, H

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1984年 / 68卷 / 01期

关键词：

D O I：

10.1016/0022-0248(84)90390-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：15 / 20

页数：6

共 9 条

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[8] COMPLEX FREE-CARRIER PROFILE SYNTHESIS BY ATOMIC-PLANE DOPING OF MBE GAAS [J].

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