INTERSUBBAND OPTICAL-ABSORPTION IN HEAVILY DOPED N-TYPE GAAS/AL0.3GA0.7AS MULTIPLE QUANTUM-WELLS

被引：13

作者：

JOGAI, B

MANASREH, MO

STUTZ, CE

WHITNEY, RL

KINELL, DK

机构：

[1] WRIGHT LAB,ELRA,SOLID STATE ELECTR DIRECTORATE,WRIGHT PATTERSON AFB,OH 45433

[2] LOCKHEED PALO ALTO RES LABS,PALO ALTO,CA 94304

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.46.7208

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Intersubband optical absorption between the ground and first excited states and the first and second excited states is reported for n-type doped GaAs/Al1-xGaxAs multiple quantum wells. This phenomenon is shown to be due to high doping, which causes more than one subband to be populated. Experimental results supported by theoretical calculations are presented.

引用

收藏

页码：7208 / 7211

页数：4

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