EFFECTS OF NITROGEN ON DISLOCATION BEHAVIOR AND MECHANICAL STRENGTH IN SILICON-CRYSTALS

被引：163

作者：

SUMINO, K ^{[1
]}

YONENAGA, I ^{[1
]}

IMAI, M ^{[1
]}

ABE, T ^{[1
]}

机构：

[1] SHIN ETSU HANDOTAI CO LTD,ANNAKA,GUMMA 37901,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 09期

关键词：

D O I：

10.1063/1.332770

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5016 / 5020

页数：5

共 14 条

[1]

ABE T, 1981, SEMICONDUCTOR SILICO, P54

[2] DISLOCATION PINNING EFFECT OF OXYGEN-ATOMS IN SILICON [J].

HU, SM .

APPLIED PHYSICS LETTERS, 1977, 31 (02) :53-55

[3]

IMAI M, 1983, PHILOS MAG A, V47, P599, DOI 10.1080/01418618308245248

[4] INSITU X-RAY TOPOGRAPHIC STUDIES OF THE GENERATION AND THE MULTIPLICATION PROCESSES OF DISLOCATIONS IN SILICON-CRYSTALS AT ELEVATED-TEMPERATURES [J].

SUMINO, K ;

HARADA, H .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1981, 44 (06) :1319-1334

[5]

SUMINO K, 1983, PHILOS MAG A, V47, P753, DOI 10.1080/01418618308245262

[6] ORIGIN OF THE DIFFERENCE IN THE MECHANICAL STRENGTHS OF CZOCHRALSKI-GROWN SILICON AND FLOAT-ZONE-GROWN SILICON [J].

SUMINO, K ;

HARADA, H ;

YONENAGA, I .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (01) :L49-L52

[7] DIFFERENCE IN THE MECHANICAL STRENGTHS OF DISLOCATION-FREE CRYSTALS OF CZOCHRALSKI SILICON AND FLOAT-ZONE SILICON [J].

SUMINO, K ;

YONENAGA, I .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (09) :L685-L688

[8]

SUMINO K, 1981, SEMICONDUCTOR SILICO, P208

[9]

Sumino K., 1981, P INT C DISLOCATION, P212

[10]

SUMINO K, 1983, DEFECTS SEMICONDUCTO

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