THERMAL DONOR FORMATION AND THE LOSS OF OXYGEN FROM SOLUTION IN SILICON HEATED AT 450-DEGREES-C

被引：25

作者：

CLAYBOURN, M

NEWMAN, RC

机构：

来源：

关键词：

D O I：

10.1063/1.99557

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2139 / 2141

页数：3

共 12 条

[1] THE STATISTICS OF DIVALENT IMPURITY CENTRES IN A SEMICONDUCTOR [J].

CHAMPNESS, CH .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (12) :1335-1339

[2] ACTIVATION-ENERGY FOR THERMAL DONOR FORMATION IN SILICON [J].

CLAYBOURN, M ;

NEWMAN, RC .

FULLER, CS ;

LOGAN, RA .

KAISER, W ;

FRISCH, HL ;

REISS, H .

PHYSICAL REVIEW, 1958, 112 (05) :1546-1554

[5]

KIMERLING LC, 1986, MATER RES SOC S P, V59, P83

[6]

MICHEL J, IN PRESS MATER RES S, V104

NEWMAN, RC .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (30) :L967-L972

[8]

NEWMAN RC, IN PRESS MATER RES S, V104

[9]

TAN TY, 1986, MATER RES SOC S P, V59, P195

[10]

THURBER WR, 1981, NBS40064 SPEC PUBL