LOW THERMAL BUDGET POLYCRYSTALLINE SILICON-GERMANIUM THIN-FILM TRANSISTORS FABRICATED BY RAPID THERMAL ANNEALING

A low temperature (less-than-or-equal-to 600-degrees-C) and short time polycrystalline silicon-germanium thin-film transistor technology is demonstrated. The use of rapid thermal annealing for channel crystallization and dopant activation allows for shorter anneal times and thus higher throughputs than with conventional furnace annealing. Moreover, the use of silicon-germanium allows for lower process temperatures to be used than is required for silicon thus leading to minimal shrinkage and warpage, and enabling this technology to be compatible with large-area glass substrates.