LOW THERMAL BUDGET POLYCRYSTALLINE SILICON-GERMANIUM THIN-FILM TRANSISTORS FABRICATED BY RAPID THERMAL ANNEALING

被引:16
作者
JURICHICH, S
KING, TJ
SARASWAT, K
MEHLHAFF, J
机构
[1] AKTIS CORP, ROCKLIN, CA 95677 USA
[2] XEROX CORP, PALO ALTO RES CTR, PALO ALTO, CA 94304 USA
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1994年 / 33卷 / 8B期
关键词
SILICON-GERMANIUM; RAPID THERMAL ANNEALING; THIN-FILM TRANSISTOR; CRYSTALLIZATION; DOPANT ACTIVATION; POLYSILICON;
D O I
10.1143/JJAP.33.L1139
中图分类号
O59 [应用物理学];
学科分类号
摘要
A low temperature (less-than-or-equal-to 600-degrees-C) and short time polycrystalline silicon-germanium thin-film transistor technology is demonstrated. The use of rapid thermal annealing for channel crystallization and dopant activation allows for shorter anneal times and thus higher throughputs than with conventional furnace annealing. Moreover, the use of silicon-germanium allows for lower process temperatures to be used than is required for silicon thus leading to minimal shrinkage and warpage, and enabling this technology to be compatible with large-area glass substrates.
引用
收藏
页码:L1139 / L1141
页数:3
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