POLY-SI THIN-FILM TRANSISTORS FABRICATED WITH RAPID THERMAL ANNEALED SILICON FILMS

被引：29

作者：

BONNEL, M ^{[1
]}

DUHAMEL, N ^{[1
]}

GUENDOUZ, M ^{[1
]}

HAJI, L ^{[1
]}

LOISEL, B ^{[1
]}

RUAULT, P ^{[1
]}

机构：

[1] UNIV RENNES 1, COMPOSANTS & SYST VISUALISAT LAB, F-22302 LANNION, FRANCE

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 11B期

关键词：

POLYSILICON; THIN-FILM TRANSISTOR (TFT); RAPID THERMAL ANNEALING (RTA); LOW-PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD);

D O I：

10.1143/JJAP.30.L1924

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This letter describes a new process for realization of polysilicon thin-film transitors (TFT) on glass substrates. The process is based on crystallization by rapid thermal annealing of amorphous silicon films deposited by low-pressure chemical vapor deposition (LPCVD). With this technique, the time of crystallization of the silicon films is reduced to a few seconds. Thin-film transistors have been realized using this process, and the field-effect mobility is in the range of 20 cm2.V-1.s-1.

引用

页码：L1924 / L1926

页数：3

共 9 条

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