SUBTHRESHOLD BEHAVIOR OF THIN-FILM LPCVD POLYSILICON MOSFETS

[1] THRESHOLD VOLTAGE MODELS OF SHORT, NARROW AND SMALL GEOMETRY MOSFETS - A REVIEW [J]. SOLID-STATE ELECTRONICS, 1982, 25 (07) : 621 - 641

[2] THE MISIM-FET IN THIN SEMICONDUCTOR LAYERS - DEPLETION-APPROXIMATION MODEL OF IV CHARACTERISTICS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (12) : 1717 - 1726

[3] BREWS JR, 1981, APPLIED SOLID STA SA, V2

[4] Burden RL, 1981, NUMERICAL ANAL

[5] COBBOLD RSC, 1970, THEORY APPLICATIONS

[6] FIELD-EFFECT IN LARGE GRAIN POLYCRYSTALLINE SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (03) : 197 - 201

[7] DEPP SW, 1982, MATERIALS RES SOC S, V5, P297

[8] EFFECTS OF GRAIN-BOUNDARIES ON THE CHANNEL CONDUCTANCE OF SOI MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (08) : 933 - 940

[9] ANOMALOUS LEAKAGE CURRENT IN LPCVD POLYSILICON MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (09) : 1878 - 1884

[10] FOSSUM JG, 1984, MRS S P, V33, P199

[1] THRESHOLD VOLTAGE MODELS OF SHORT, NARROW AND SMALL GEOMETRY MOSFETS - A REVIEW [J]. SOLID-STATE ELECTRONICS, 1982, 25 (07) : 621 - 641

[2] THE MISIM-FET IN THIN SEMICONDUCTOR LAYERS - DEPLETION-APPROXIMATION MODEL OF IV CHARACTERISTICS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (12) : 1717 - 1726

[3] BREWS JR, 1981, APPLIED SOLID STA SA, V2

[4] Burden RL, 1981, NUMERICAL ANAL

[5] COBBOLD RSC, 1970, THEORY APPLICATIONS

[6] FIELD-EFFECT IN LARGE GRAIN POLYCRYSTALLINE SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (03) : 197 - 201

[7] DEPP SW, 1982, MATERIALS RES SOC S, V5, P297

[8] EFFECTS OF GRAIN-BOUNDARIES ON THE CHANNEL CONDUCTANCE OF SOI MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (08) : 933 - 940

[9] ANOMALOUS LEAKAGE CURRENT IN LPCVD POLYSILICON MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (09) : 1878 - 1884

[10] FOSSUM JG, 1984, MRS S P, V33, P199