POSSIBILITY OF STIMULATED EMISSION IN GAP-N

被引：9

作者：

WOLF, HD

RICHTER, K

WEYRICH, C

机构：

[1] SIEMENS RES LABS,MUNICH,WEST GERMANY

[2] MAX PLANCK INST FESTKORPERFORSCH,SIEMENS RES LABS,STUTTGART,WEST GERMANY

[3] SIEMENS RES LABS,ERLANGEN,WEST GERMANY

来源：

SOLID STATE COMMUNICATIONS | 1974年 / 15卷 / 04期

关键词：

D O I：

10.1016/0038-1098(74)90248-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：725 / 727

页数：3

共 11 条

[1]

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[3] STIMULATED EMISSION AND LASER OPERATION (CW, 77 DEGREES K) ASSOCIATED WITH DEEP ISOELECTRONIC TRAPS IN INDIRECT SEMICONDUCTORS [J].

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[4] IN1-XGAXP-N LASER OPERATION (CW,77DEGREES) ON NITROGEN A-LINE TRANSITION IN INDIRECT CRYSTALS (X GREATER THAN OR EQUAL TO 0.74) AND IN DIRECT CRYSTALS ABOVE FUNDAMENTAL BAND EDGE (X GREATER THAN OR EQUAL TO 3.71) [J].

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[5] EFFICIENT GREEN ELECTROLUMINESCENT JUNCTIONS IN GAP [J].

LOGAN, RA ;

WHITE, HG ;

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[6] INDIRECT-BAND-GAP SUPER-RADIANT LASER IN GAP CONTAINING ISOELECTRONIC TRAPS [J].

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LOGAN, RA .

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[8] DIRECT DETERMINATION OF OPTICAL GAIN IN SEMICONDUCTOR CRYSTALS [J].

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[9] EFFECT OF BAND TAILS ON STIMULATED EMISSION OF LIGHT IN SEMICONDUCTORS [J].

STERN, F .

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[10] ISOELECTRONIC TRAPS DUE TO NITROGEN IN GALLIUM PHOSPHIDE [J].

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