VERY LOW-TEMPERATURE (250-DEGREES-C) EPITAXIAL-GROWTH OF SILICON BY GLOW-DISCHARGE OF SILANE

被引：22

作者：

BAERT, K

SYMONS, J

VANDERVORST, W

VANHELLEMONT, J

CAYMAX, M

POORTMANS, J

NIJS, J

MERTENS, R

机构：

来源：

关键词：

D O I：

10.1063/1.98301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1922 / 1924

页数：3

共 6 条

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[3] EPITAXIAL-GROWTH OF SILICON BY PHOTOCHEMICAL VAPOR-DEPOSITION AT A VERY LOW-TEMPERATURE OF 200-DEGREES-C
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[4] PREPARATION OF POLYCRYSTALLINE SILICON BY HYDROGEN-RADICAL-ENHANCED CHEMICAL VAPOR-DEPOSITION
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