THICKNESS-DEPENDENT FREQUENCY-SHIFT IN INFRARED SPECTRAL ABSORBENCY OF SILICON-OXIDE FILM ON SILICON

被引:40
作者
GUNDE, MK [1 ]
ALEKSANDROV, B [1 ]
机构
[1] ISKRA MICROELECTR, LJUBLJANA, YUGOSLAVIA
关键词
D O I
10.1366/0003702904086722
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The spectral dependence of the refractive index n and extinction coefficient k of chemical-vapor-deposited (CVD) silicon oxide film on silicon wafer has been determined. The results are used to calculate spectral absorbances for 0.1-2 μm thick oxide films with unchanged structure. The dependence on thickness of the position of Si-O stretching (νM) has been investigated. The main factor influencing the frequency is the transmission factor at the air/film and film/substrate boundaries. In the limit of d → 0, νM corresponds to the maximum of the Im (ε) function.
引用
收藏
页码:970 / 974
页数:5
相关论文
共 16 条
[11]   STRESS AND DENSITY EFFECTS ON INFRARED-ABSORPTION SPECTRA OF SILICATE GLASS-FILMS [J].
NAKAMURA, M ;
KANZAWA, R ;
SAKAI, K .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (06) :1167-1171
[12]   INFRARED OPTICAL-PROPERTIES OF SIO2 AND SIO2 LAYERS ON SILICON [J].
PHILIPP, HR .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :1053-1057
[13]  
PLISKIN WA, 1967, PHYS THIN FILMS, V4, P257
[14]   DETERMINATION OF THE SIO2/SI INTERFACE ROUGHNESS BY DIFFUSE REFLECTANCE MEASUREMENTS [J].
ROOS, A ;
BERGKVIST, M ;
RIBBING, CG .
APPLIED OPTICS, 1988, 27 (20) :4314-4317
[15]  
STALLHOFER P, 1983, SOLID STATE TECHNOL, V26, P233
[16]  
[No title captured]