INFRARED OPTICAL-PROPERTIES OF SIO2 AND SIO2 LAYERS ON SILICON

被引：97

作者：

PHILIPP, HR

机构：

[1] General Electric Corporate Research and Development Center, Schenectady

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 02期

关键词：

D O I：

10.1063/1.326080

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The complex index of refraction N=n-ik for amorphous SiO2 is derived in the energy range 0.03-1.0 eV by Kramers-Kronig analysis of reflectance data. The results are used to compute the transmission, reflectance, and absorptivity of thin layers of SiO2 on Si substrates in the vicinity of the 0.14-eV (9 μ) lattice absorption band of SiO2. The dependence of these quantities on the layer thickness and angle of incidence is discussed.

引用

页码：1053 / 1057

页数：5

共 27 条

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