RADIATION EFFECTS ON GATE INDUCED DRAIN LEAKAGE CURRENT IN METAL-OXIDE SEMICONDUCTOR TRANSISTORS

被引:8
作者
DAS, NC
NATHAN, V
TALLON, R
MAIER, RJ
机构
[1] Phillips Laboratory, Passive Sensors Branch, Kirtland AFB
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.352065
中图分类号
O59 [应用物理学];
学科分类号
摘要
The gate induced drain leakage current (I(dl)) of metal oxide semiconductor (MOS) transistors changes significantly when the devices are exposed to ionizing radiation. For n-channel MOS transistors, I(dl) decreases, whereas for p-channel devices, it increases. The change of leakage current at higher tunneling fields is proportional to the increase of hole trap density in the gate oxide region. The leakage current measurement technique is a useful tool for characterizing radiation effects in MOS transistors because at higher bias it is dependent on increase of oxide charge while independent of interface states. The annealing of trapped charges at the tunnel junction is faster than in the channel region as determined from subthreshold characteristics. The results of the thermal annealing experiment reveal that the drain current in the control region is attributed to interface state assisted tunneling.
引用
收藏
页码:4958 / 4962
页数:5
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