LANDAU-LEVEL PINNING IN WIDE MODULATION-DOPED QUANTUM-WELL STRUCTURES IN THE INTEGER QUANTUM HALL REGIME

被引：28

作者：

HAYES, DG

SKOLNICK, MS

WHITTAKER, DM

SIMMONDS, PE

TAYLOR, LL

BASS, SJ

EAVES, L

机构：

[1] UNIV NOTTINGHAM,DEPT PHYS,NOTTINGHAM NG7 2RD,ENGLAND

[2] UNIV WOLLONGONG,DEPT PHYS,WOLLONGONG,NSW 2500,AUSTRALIA

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.44.3436

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Pinning effects between Landau levels in the two-dimensional electron gases on opposite sides of an asymmetric, wide quantum well in high magnetic field are reported. The process is driven by the renormalization of the potential when charge is transferred to maintain equilibrium between discrete-Landau-level densities of states. Self-consistent Hartree calculations successfully predict the pinning and many of the anomalous features observed in magnetoluminescence and magnetotransport.

引用

收藏

页码：3436 / 3439

页数：4

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