PHOTO CVD SYSTEM FOR SILICON-NITRIDE FILM

被引：9

作者：

NUMASAWA, Y

YAMAZAKI, K

HAMANO, K

机构：

[1] NEC, VLSI Development Div,, Sagamihara, Jpn, NEC, VLSI Development Div, Sagamihara, Jpn

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1986年 / 15卷 / 01期

关键词：

FILMS - Growing - ULTRAVIOLET RADIATION;

D O I：

10.1007/BF02649946

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This report presents a photo CVD system for silicon nitride film deposition which is improved with respect to the wall deposition problem and which does not use mercury vapor sensitizer. This paper describes the concept of the photo CVD system improvement, an improved photo-CVD system, silicon nitride film depositions, and the chemical and electrical properties of the deposited films.

引用

页码：27 / 30

页数：4

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