COMPARATIVE-STUDY OF Y AND OTHER TRANSITION-METALS ON GAAS(110)

被引：25

作者：

SCHAFFLER, F

HUGHES, G

DRUBE, W

LUDEKE, R

HIMPSEL, FJ

机构：

来源：

PHYSICAL REVIEW B | 1987年 / 35卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.35.6328

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6328 / 6336

页数：9

共 46 条

[1] ROLE OF SURFACE ANTISITE DEFECTS IN THE FORMATION OF SCHOTTKY BARRIERS [J].

ALLEN, RE ;

DOW, JD .

PHYSICAL REVIEW B, 1982, 25 (02) :1423-1426

[2] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].

Brillson, L. J. .

SURFACE SCIENCE REPORTS, 1982, 2 (02) :123-326

[3] INSITU INVESTIGATION OF BAND BENDING DURING FORMATION OF GAAS-GE HETEROSTRUCTURES [J].

BRUGGER, H ;

SCHAFFLER, F ;

ABSTREITER, G .

PHYSICAL REVIEW LETTERS, 1984, 52 (02) :141-144

[4] THEORETICAL INVESTIGATION OF THE ELECTRICAL AND OPTICAL-ACTIVITY OF VANADIUM IN GAAS [J].

CALDAS, MJ ;

FIGUEIREDO, SK ;

FAZZIO, A .

PHYSICAL REVIEW B, 1986, 33 (10) :7102-7109

[5]

CHADI DJ, 1982, J VAC SCI TECHNOL, V16, P1159

[6] INDEPENDENCE OF FERMI-LEVEL POSITION AND VALENCE-BAND EDGE DISCONTINUITY AT GAAS-GE(100) INTERFACES [J].

CHIARADIA, P ;

KATNANI, AD ;

SANG, HW ;

BAUER, RS .

PHYSICAL REVIEW LETTERS, 1984, 52 (14) :1246-1249

[7] TRANSITION-METAL IMPURITIES IN III-V COMPOUNDS [J].

CLERJAUD, B .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (19) :3615-3661

[8] MANY-ELECTRON SINGULARITY IN X-RAY PHOTOEMISSION AND X-RAY LINE SPECTRA FROM METALS [J].

DONIACH, S ;

SUNJIC, M .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1970, 3 (02) :285-&

[9] A MICROSCOPIC MODEL OF METAL-SEMICONDUCTOR CONTACTS [J].

DUKE, CB ;

MAILHIOT, C .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04) :1170-1177

[10]

EASTMAN DE, 1980, PHYS REV LETT, V45, P656, DOI 10.1103/PhysRevLett.45.656

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