SLOW CONDUCTIVITY RELAXATION IN BULK GERMANIUM CONTAINING OXYGEN

被引:14
作者
ADACHI, E
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10.1016/0022-3697(67)90156-4
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O6 [化学];
学科分类号
0703 ;
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页码:1821 / &
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[1]   SLOW PHOTOCONDUCTIVITY RELAXATION IN OXYGEN-DOPED N-GERMANIUM [J].
ADACHI, E .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (04) :1972-&
[2]   DONOR EQUILIBRIA IN THE GERMANIUM-OXYGEN SYSTEM [J].
FULLER, CS ;
KAISER, W ;
THURMOND, CD .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 16 (1-2) :161-163
[3]   KINETICS OF DONOR REACTIONS IN OXYGEN-DOPED GERMANIUM [J].
FULLER, CS .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 19 (1-2) :18-28
[4]   THE IONIZATION BEHAVIOR OF DONORS FORMED FROM OXYGEN IN GERMANIUM [J].
FULLER, CS ;
DOLEIDEN, FH .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 19 (3-4) :251-260
[5]  
HANNAY NB, 1959, SEMICONDUCTORS, P30
[6]  
HAYNES JR, 1955, PHYS REV, V100, P609
[7]   TRAPPING OF MINORITY CARRIERS IN SILICON .1. P-TYPE SILICON [J].
HORNBECK, JA ;
HAYNES, JR .
PHYSICAL REVIEW, 1955, 97 (02) :311-321
[8]   SOLUBILITY OF OXYGEN IN GERMANIUM [J].
KAISER, W ;
THURMOND, CD .
JOURNAL OF APPLIED PHYSICS, 1961, 32 (01) :115-&
[9]   MECHANISM OF THE FORMATION OF DONOR STATES IN HEAT-TREATED SILICON [J].
KAISER, W ;
FRISCH, HL ;
REISS, H .
PHYSICAL REVIEW, 1958, 112 (05) :1546-1554