THE EFFECTS OF ELECTROSTATIC, MOLECULAR DRAG AND GRAVITATIONAL FORCES ON THE BEHAVIOR OF PARTICLE CLOUDS IN AN RF DISCHARGE

被引:19
作者
OHANLON, JF
KANG, JW
RUSSELL, LK
HONG, LZ
机构
[1] Department of Electrical and Computer Engineering, University of Arizona, Tucson, AZ
关键词
DUSTY PLASMAS; MOLECULAR DRAG FORCES;
D O I
10.1109/27.279014
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
A Gaseous Electronics Conference (GEC) Reference Cell was used to investigate the behavior of graphite particles sputtered in an argon plasma. By configuring the reactor in a normal (wafer facing upward) and in an inverted (wafer facing downward) configuration, and by varying the direction and flow of the argon, the relative importance of gravity, molecular drag and electrostatic trapping could be observed. It was observed that particle clouds in specific locations adjacent to the wafer (refered to as particle traps) were identical in both configurations. Drag forces from the showerhead grounded electrode were sufficient to prevent particles from accumulating in the traps over the wafer. Drag forces from flow parallel to the wafer (greater-than-or-equal-to 25 cm/s) easily emptied the traps. Gas flow from a ring source mounted above a downward facing driven electrode were observed to affect the manner in which particles were removed from the ring-shaped trap surrounding the cathode. In that case, particles were observed to flow down eight fluid streamlines toward the eight openings through which the gas flowed from the reaction chamber to the pump. Comparison of results for the normal and inverted configurations also permitted estimates of the number of electrons attached to each particle.
引用
收藏
页码:122 / 127
页数:6
相关论文
共 15 条
[1]  
[Anonymous], COMMUNICATION, P164
[2]  
Baines M. J., 1965, MNRAS, V130, P63, DOI DOI 10.1093/MNRAS/130.1.63
[3]  
BROWN DA, 1993, YEAR 5 ANN REV JUN
[4]   ELECTROSTATIC TRAPPING OF CONTAMINATION PARTICLES IN A PROCESS PLASMA ENVIRONMENT [J].
CARLILE, RN ;
GEHA, S ;
OHANLON, JF ;
STEWART, JC .
APPLIED PHYSICS LETTERS, 1991, 59 (10) :1167-1169
[5]  
CARLILE RN, 1993, J APPL PHYS, V73, P1785
[6]  
COLLINS S, 1994, IN PRESS J VAC A JUN
[7]   THE DEPENDENCE OF CONTAMINATION PARTICLE TRAPS ON WAFER MATERIAL AND TOPOGRAPHY [J].
GEHA, SG ;
CARLILE, RN ;
OHANLON, JF ;
SELWYN, GS .
JOURNAL OF APPLIED PHYSICS, 1992, 72 (02) :374-383
[8]  
GOREE J, COMMUNICATION
[9]  
Hinds W., 1982, AEROSOL TECHNOLOGY
[10]   THE ELECTROSTATIC NATURE OF CONTAMINATIVE PARTICLES IN A SEMICONDUCTOR PROCESSING PLASMA [J].
NOWLIN, RN ;
CARLILE, RN .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (05) :2825-2883